1n5391gp thru 1n5399gp document number 88515 14-oct-05 vishay general semiconductor www.vishay.com 1 do-204ac (do-15) p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 glass passivated junction rectifier major ratings and characteristics i f(av) 1.5 a v rrm 50 v to 1000 v i fsm 50 a i r 5.0 a v f 1.4 v t j max. 175 c features superectifier struct ure for high reliability application cavity-free glass-passivated junction low forward voltage drop low leakage current, typical i r less than 0.1 a high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application mechanical data case: do-204ac, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n53 91gp 1n53 92gp 1n53 93gp 1n53 94gp 1n53 95gp 1n53 96gp 1n53 97gp 1n53 98gp 1n53 99gp unit * maximum repetitive peak reverse voltage v rrm 50 100 200 300 400 500 600 800 1000 v * maximum rms voltage v rms 35 70 140 210 280 350 420 560 700 v * maximum dc blocking voltage v dc 50 100 200 300 400 500 600 800 1000 v * maximum average forward rectified current 0.375" (9.5 mm) lead length at t l = 70 c i f(av) 1.5 a * peak forward surge current 8.3 ms single half sine-wave super-imposed on rated load i fsm 50 a * maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at t a = 70 c i r(av) 300 a * operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88515 14-oct-05 1n5391gp thru 1n5399gp vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted *jedec registered values ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol 1n53 91gp 1n53 92gp 1n53 93gp 1n53 94gp 1n53 95gp 1n53 96gp 1n53 97gp 1n53 98gp 1n53 99gp unit * maximum instantaneous forward voltage at 1.5 a t a = 70 c v f 1.4 v * maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 150 c i r 5.0 300 a ty p i c a l r eve r s e recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.0 s typical junction capacitance at 4.0v, 1mhz c j 15 pf parameter symbol 1n53 91gp 1n53 92gp 1n53 93gp 1n53 94gp 1n53 95gp 1n53 96gp 1n53 97gp 1n53 98gp 1n53 99gp unit typical thermal resistance (1) r ja 45 c/w figure 1. forward current derating curve 0 1.0 2.0 25 0 50 75 100 125 150 175 a v erage for w ard rectified c u rrent (a) lead temperat u re ( c) 0.5 0.375" (9.5mm) lead length t a ,am b ient temperat u re t l , lead temperat u re 60 hz resisti v eor ind u cti v e load figure 2. maximum non-repetitive peak forward surge current 0 10 20 30 50 40 1 100 10 peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz t j = t j max. 8 .3 ms single half sine- w a v e
1n5391gp thru 1n5399gp document number 88515 14-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 10 1 instantaneo u sfor w ard c u rrent (a) instantaneo u sfor w ard v oltage ( v ) t j = 25 c p u lse w idth = 300 s 1% d u ty cycle 020 60 40 100 8 0 percent of rated peak re v erse v oltage (%) 0.01 0.1 10 1 instantaneo u s re v erse leakage c u rrent ( a) t j = 125 c t j = 25 c t j = 75 c figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 1 10 100 100 10 1 t j = 25 c f = 1.0 mhz v sig = 50m v p-p t, p u lse d u ration (sec.) transient thermal impedance ( c/ w ) 0.1 0.01 1 10 100 100 10 1 0.1 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5.8) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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